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GT60N321 - Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四

GT60N321_5599407.PDF Datasheet

Part No.

GT60N321

Description

File Size

172.02K / 6 Page

Maker

Toshiba, Corp.

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Part: GT60N321

Maker: TOSHIBA

Pack: TO-3PL

Stock: 3461

Unit price for :

50: $3.62

100: $3.44

1000: $3.25

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